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SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 1 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual n-channel 30 v (d-s) mosfets ordering information : SIZ998DT-t1-ge3 (lead (pb) -free and halogen-free) features ? trenchfet ? gen iv power mosfets ?skyfet ? low-side mosfet with integrated schottky ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? cpu core power ? computer/server peripherals ?pol ? synchronous buck converter ? telecom dc/dc notes a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpair is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bo ttom side solder interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. f. maximum under steady state co nditions is 68 c/w for channe l-1 and 61 c/w for channel-2. g. t c = 25 c. product summary v ds (v) r ds(on) ( ) (max.) i d (a) a, g q g (typ.) channel- 1 30 0.0067 at v gs = 10 v 20 5.4 nc 0.0100 at v gs = 4.5 v 20 channel- 2 30 0.0028 at v gs = 10 v 60 13.2 nc 0.0038 at v gs = 4.5 v 60 powerpair ? 6 x 5 top view 1 6 mm 1 6 mm 5 mm bottom view 1 g 1 2 d 1 4 d 1 3 d 1 s 1 /d 2 (pin 9) d 1 s 2 5 s 2 6 g 2 8 s 2 7 d 1 s 2 n-channel 2 mosfet g 1 s 1 /d 2 g 2 schottky diode n-channel 1 mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 v gate-source voltage v gs +20, -16 continuous drain current (t j = 150 c) t c = 25 c i d 20 a 60 a a t c = 70 c 20 a 60 a t a = 25 c 18.8 b, c 32.8 b, c t a = 70 c 15 c 26.2 b, c pulsed drain current (t = 100 s) i dm 90 130 continuous source drain diode current t c = 25 c i s 16.8 27.4 t a = 25 c 3.2 b, c 4 b, c single pulse avalanche current l = 0.1 mh i as 15 20 single pulse avalanche energy e as 11.25 20 mj maximum power dissipation t c = 25 c p d 20.2 32.9 w t c = 70 c 12.9 21.1 t a = 25 c 3.8 b, c 4.8 b, c t a = 70 c 2.4 b, c 3.1 b, c operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, f t 10 s r thja 26 33 21 26 c/w maximum junction-to-case (drain) steady state r thjc 4.76.233.8
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 2 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 30 - - v v gs = 0 v, i d = 250 a ch-2 30 - - gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1.1 - 2.2 v v ds = v gs , i d = 250 a ch-2 1.1 - 2.2 gate source leakage i gss v ds = 0 v, v gs = 20 v, -16 v ch-1 - - 100 na ch-2 - - 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 - - 1 a ch-2 - - 150 v ds = 30 v, v gs = 0 v, t j = 55 c ch-1 - - 5 ch-2 - - 3 ma on-state drain current b i d(on) v ds 5 v, v gs = 10 v ch-1 20 - - a ch-2 20 - - drain-source on-s tate resistance b r ds(on) v gs = 10 v, i d = 15 a ch-1 - 0.0047 0.0067 v gs = 10 v, i d = 19 a ch-2 - 0.0022 0.0028 v gs = 4.5 v, i d = 12 a ch-1 - 0.0065 0.0100 v gs = 4.5 v, i d = 15 a ch-2 - 0.0030 0.0038 forward transconductance b g fs v ds = 10 v, i d = 15 a ch-1 - 80 - s v ds = 10 v, i d = 19 a ch-2 - 165 - dynamic a input capacitance c iss channel-1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch-1 - 930 - pf ch-2 - 2620 - output capacitance c oss ch-1 - 325 - ch-2 - 902 - reverse transfer capacitance c rss ch-1 - 21 - ch-2 - 55 - c rss /c iss ratio ch-1 - 0.023 0.046 ch-2 - 0.021 0.042 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 20 a ch-1 - 12 18 nc ch-2 - 29.5 44.3 channel-1 v ds = 15 v, v gs = 4.5 v, i d = 20 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = 20 a ch-1 - 5.4 8.1 ch-2 - 13.2 19.8 gate-source charge q gs ch-1 - 3 - ch-2 - 7.1 - gate-drain charge q gd ch-1 - 0.75 - ch-2 - 1.3 - output charge q oss v ds = 15 v, v gs = 0 v ch-1 - 10 - ch-2 - 30 - gate resistance r g f = 1 mhz ch-1 0.3 1.5 3 ch-2 0.2 1.1 2.2
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 3 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. guaranteed by design, not su bject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. dynamic a turn-on delay time t d(on) channel-1 v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 4.5 v, r g = 1 channel-2 v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 4.5 v, r g = 1 ch-1 - 15 30 ns ch-2 - 25 50 rise time t r ch-1 - 65 130 ch-2 - 65 130 turn-off delay time t d(off) ch-1 - 10 20 ch-2 - 17 34 fall time t f ch-1 - 10 20 ch-2 - 10 20 turn-on delay time t d(on) channel-1 v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 channel-2 v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 ch-1 - 10 20 ch-2 - 15 30 rise time t r ch-1 - 25 50 ch-2 - 20 40 turn-off delay time t d(off) ch-1 - 15 30 ch-2 - 22 44 fall time t f ch-1 - 10 20 ch-2 - 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 - - 20 a ch-2 - - 60 pulse diode forward current (t = 100 s) i sm ch-1 - - 90 ch-2 - - 130 body diode voltage v sd i s = 10 a, v gs = 0 v ch-1 - 0.8 1.2 v i s = 2 a, v gs = 0 v ch-2 - 0.41 0.53 body diode reverse recovery time t rr channel-1 i f = 10 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 10 a, di/dt = 100 a/s, t j = 25 c ch-1 - 30 60 ns ch-2 - 47 94 body diode reverse recovery charge q rr ch-1 - 11 22 nc ch-2 - 55 110 reverse recovery fall time t a ch-1 - 18 - ns ch-2 - 27 - reverse recovery rise time t b ch-1 - 12 - ch-2 - 20 - specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 4 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge transfer characteristics capacitance on-resistance vs. junction temperature 0 20 40 60 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0.000 0.002 0.004 0.006 0.008 0.010 0 20406080 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 03691215 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) v d s = 24 v v d s = 15 v v d s = 7.5 v i d = 19 a 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) v gs = 4.5 v i d = 19 a v gs = 10 v
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 5 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 v gs (th) (v) t j -temperature ( c) i d = 250 a 0.000 0.003 0.006 0.009 0.012 0.015 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d = 19 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 power (w) time ( s ) 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 10 s i dm limited 100 m s limited by r d s (on) * 1 m s t a = 25 c bvd ss limited 10 m s 100 s 1 s dc
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 6 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) current derating* powe r, junction-to-case * the power di ssipation p d is based on t j (max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 0 10 20 30 40 0 25 50 75 100 125 150 i d - drain current (a) t c -ca s e temperature ( c) package limited 0 5 10 15 20 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w)
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 7 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective tran s ient thermal impedance sq uare wave pul s e duration ( s ) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pul s e t 1 t 2 n otes: p dm 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted 0.1 1 0.0001 0.001 0.01 0.1 1 normalized effective tran s ient thermal impedance sq uare wave pul s e duration ( s ) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pul s e
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 8 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge transfer characteristics capacitance on-resistance vs. junction temperature 0 26 52 78 104 130 00.511.52 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v v gs = 2 v 0 0.001 0.002 0.003 0.004 0.005 0 20406080 r d s (on) -on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 6 12 18 24 30 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 24 v v d s = 8 v; 15 v i d = 19 a 0 5 10 15 20 0 0.7 1.4 2.1 2.8 3.5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 1010 2020 3030 4040 0 6 12 18 24 30 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) v gs = 10 v, 19 a v gs = 4.5 v, 15 a
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 9 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage reverse current (schottky) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 0 255075100125150 i r - rever s e (a) t j - junction temperature ( c) v d s = 30 v v d s = 10 v, 20 v 0.000 0.002 0.004 0.006 0.008 0.010 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d =19a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 power (w) time ( s ) 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 m s limited by r d s (on) * 1 m s t a = 25 c bvd ss limited 10 m s 100 s 10 s , 1 s dc limited by i dm
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 10 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) current derating* power, junction-to-case power, junction-to-ambient * the power di ssipation p d is based on t j (max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 0 20 40 60 80 100 0 255075100125150 i d - drain current (a) t c -ca s e temperature ( c) 0 10 20 30 40 0 25 50 75 100 125 150 power (w) t c -ca s e temperature ( c) 0 0.5 1 1.5 2 2.5 0 255075100125150 power (w) t a - ambient temperature ( c)
SIZ998DT www.vishay.com vishay siliconix s15-0144-rev. a, 02-feb-15 11 document number: 62979 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62979 . 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective tran s ient thermal impedance sq uare wave pul s e duration ( s ) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pul s e t 1 t 2 n otes: p dm 1. duty cycle, d = 2. per unit base = r thja = 61 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted 0.1 1 0.0001 0.001 0.01 0.1 normalized effective tran s ient thermal impedance sq uare wave pul s e duration ( s ) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pul s e
package information www.vishay.com vishay siliconix revision: 22-dec-14 1 document number: 63656 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpair ? 6 x 5 case outline millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.032 a1 0.00 - 0.10 0.000 - 0.004 a3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 bsc 0.010 bsc d 4.90 5.00 5.10 0.192 0.196 0.200 d1 3.75 3.80 3.85 0.148 0.150 0.152 e 5.90 6.00 6.10 0.232 0.236 0.240 e1 option aa (for w/b) 2.62 2.67 2.72 0.103 0.105 0.107 e1 option ab (for bwl) 2.42 2.47 2.52 0.095 0.097 0.099 e2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 bsc 0.050 bsc k option aa (for w/b) 0.45 typ. 0.018 typ. k option ab (for bwl) 0.65 typ. 0.025 typ. k1 0.66 typ. 0.025 typ. l 0.33 0.43 0.53 0.013 0.017 0.020 l3 0.23 bsc 0.009 bsc z 0.34 bsc 0.013 bsc ecn: t14-0782-rev. c, 22-dec-14 dwg: 6005 a1 b1 f f e pin 1 pin 2 pin 3 pin 4 pin 8 pin 7 pin 6 pin 5 a e2 e e1 k z l d1 b k1 back s ide view 0.10 c d1 d a 0.08 c pin # 1 ident (optional) 0.10 c 2x c a3 l3 top s ide view 0.10 c 2x pin 8 pin 7 pin 6 pin 5 pin 1 pin 2 pin 3 pin 4
pad pattern www.vishay.com vishay siliconix revision: 16-feb-15 1 document number: 67480 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for powerpair ? 6 x 5 note ? linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. 2.835 (0.112) 2.12 (0.083) 0.55 (0.022) 1.21 (0.048) 2.13 (0.084) 2.835 (0.112) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) 1.905 (0.075) 0.53 (0.021) 0.44 (0.017) 0.92 (0.036) 0.66 (0.026) 0.45 (0.018) 0.53 (0.021) 2.67 (0.105) 0.28 (0.011) dimen s ion s in millimeter s (inch) pin 1 (0, 0) 4 (0.157) 4 (0.157)
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